STMicroelectronics, Inc. Single Bipolar Transistors BUL416T

Description
TRANS NPN 800V 6A TO220
Request a Quote Datasheet
Description
TRANS NPN 800V 6A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BUL416T - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BUL416T
Single Bipolar Transistors BUL416T
TRANS NPN 800V 6A TO220

TRANS NPN 800V 6A TO220

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BUL416T - 012374-BUL416T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BUL416T
012374-BUL416T
TRANSISTORS - Transistors (BJT) - Single - BUL416T 012374-BUL416T
Manufacturer: STMicroelectronics Win Source Part Number: 012374-BUL416T Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 800V Max Vce (sat): 1.5V @ 1.33A, 4A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 18 @ 700mA, 5V Maximum Power Dissipation: 110W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 012374-BUL416T
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 800V
Max Vce (sat): 1.5V @ 1.33A, 4A
Collector Cut-off Current(Max): 250μA
Typical Gain (hFE) (Min): 18 @ 700mA, 5V
Maximum Power Dissipation: 110W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BUL416T
Bipolar Transistors - BJT BUL416T
Bipolar Transistors - BJT NPN HI-VOLT FAST SW

Bipolar Transistors - BJT NPN HI-VOLT FAST SW

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUL416T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUL416T
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUL416T
TRANS NPN 800V 6A TO220

TRANS NPN 800V 6A TO220

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BUL416T 012374-BUL416T BUL416T BUL416T
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BUL416T Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB
IC(max) 6000 milliamps 6000 milliamps
VCEO 800 volts 800 volts
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