STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Single - BUL213 BUL213

Description
Manufacturer: STMicroelectronics Win Source Part Number: 201653-BUL213 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 900mV @ 200mA, 1A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 16 @ 350mA, 3V Maximum Power Dissipation: 60W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 201653-BUL213 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 900mV @ 200mA, 1A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 16 @ 350mA, 3V Maximum Power Dissipation: 60W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BUL213 - 201653-BUL213 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BUL213
201653-BUL213
TRANSISTORS - Transistors (BJT) - Single - BUL213 201653-BUL213
Manufacturer: STMicroelectronics Win Source Part Number: 201653-BUL213 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 900mV @ 200mA, 1A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 16 @ 350mA, 3V Maximum Power Dissipation: 60W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 201653-BUL213
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 900mV @ 200mA, 1A
Collector Cut-off Current(Max): 250μA
Typical Gain (hFE) (Min): 16 @ 350mA, 3V
Maximum Power Dissipation: 60W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - BUL213-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BUL213-ND
Single Bipolar Transistors BUL213-ND
Bipolar (BJT) Transistor NPN 600V 3A 60W Through Hole TO-220

Bipolar (BJT) Transistor NPN 600V 3A 60W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUL213 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUL213
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUL213
TRANS NPN 600V 3A TO220

TRANS NPN 600V 3A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 201653-BUL213 BUL213-ND BUL213
Product Name TRANSISTORS - Transistors (BJT) - Single - BUL213 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN
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