STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Single - BUL213 BUL213

Description
Manufacturer: STMicroelectronics Win Source Part Number: 201653-BUL213 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 900mV @ 200mA, 1A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 16 @ 350mA, 3V Maximum Power Dissipation: 60W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 201653-BUL213 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 900mV @ 200mA, 1A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 16 @ 350mA, 3V Maximum Power Dissipation: 60W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BUL213 - 201653-BUL213 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BUL213
201653-BUL213
TRANSISTORS - Transistors (BJT) - Single - BUL213 201653-BUL213
Manufacturer: STMicroelectronics Win Source Part Number: 201653-BUL213 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 900mV @ 200mA, 1A Collector Cut-off Current(Max): 250μA Typical Gain (hFE) (Min): 16 @ 350mA, 3V Maximum Power Dissipation: 60W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 201653-BUL213
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 900mV @ 200mA, 1A
Collector Cut-off Current(Max): 250μA
Typical Gain (hFE) (Min): 16 @ 350mA, 3V
Maximum Power Dissipation: 60W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
3A 600V TO-220 Bipolar Transistor
276-BUL213
3A 600V TO-220 Bipolar Transistor 276-BUL213
3A, 600V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN Product overview: BUL213 from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 600V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 600V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BUL213 can be used for catalog matching and distributor lookup.

3A, 600V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN Product overview: BUL213 from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 600V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 600V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BUL213 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - BUL213-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BUL213-ND
Single Bipolar Transistors BUL213-ND
Bipolar (BJT) Transistor NPN 600V 3A 60W Through Hole TO-220

Bipolar (BJT) Transistor NPN 600V 3A 60W Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUL213 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUL213
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUL213
TRANS NPN 600V 3A TO220

TRANS NPN 600V 3A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 201653-BUL213 276-BUL213 BUL213-ND BUL213
Product Name TRANSISTORS - Transistors (BJT) - Single - BUL213 3A 600V TO-220 Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3
IC(max) 3000 milliamps 3000 milliamps
VCEO 600 volts 600 volts
Unlock Full Specs
to access all available technical data