STMicroelectronics, Inc. Single Bipolar Transistors BUL1203E

Description
Bipolar (BJT) Transistor NPN 550V 5A 100W Through Hole TO-220
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 550V 5A 100W Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 497-12451-5-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-12451-5-ND
Single Bipolar Transistors 497-12451-5-ND
Bipolar (BJT) Transistor NPN 550V 5A 100W Through Hole TO-220

Bipolar (BJT) Transistor NPN 550V 5A 100W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BUL1203E - 079753-BUL1203E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BUL1203E
079753-BUL1203E
TRANSISTORS - Transistors (BJT) - Single - BUL1203E 079753-BUL1203E
Manufacturer: STMicroelectronics Win Source Part Number: 079753-BUL1203E Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Family Name: BUL1203E Categories: Discrete Semiconductor Products Status: Active Case / Package: TO-220AB Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 550V Max Vce (sat): 1.5V @ 1A, 3A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 9 @ 2A, 5V Maximum Power Dissipation: 100W Alternative Parts (Cross-Reference): BUJ303A; BUT11AI; 2SC3087M; 2SC3087L; Introduction Date: June 18, 2001 ECCN: EAR99 Country of Origin: China Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 079753-BUL1203E
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Family Name: BUL1203E
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: TO-220AB
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 550V
Max Vce (sat): 1.5V @ 1A, 3A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 9 @ 2A, 5V
Maximum Power Dissipation: 100W
Alternative Parts (Cross-Reference): BUJ303A; BUT11AI; 2SC3087M; 2SC3087L;
Introduction Date: June 18, 2001
ECCN: EAR99
Country of Origin: China
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BUL1203E
Bipolar Transistors - BJT BUL1203E
Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET

Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUL1203E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUL1203E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUL1203E
TRANS NPN 550V 5A TO220

TRANS NPN 550V 5A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 497-12451-5-ND 079753-BUL1203E BUL1203E BUL1203E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BUL1203E Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB
Packing Method Rail; Tube; Tube/Rail Tube; Tube
IC(max) 5000 milliamps 5000 milliamps
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