STMicroelectronics, Inc. Single Bipolar Transistors BUL1102E

Description
Bipolar (BJT) Transistor NPN 450V 4A 70W Through Hole TO-220
  • Single Bipolar Transistors - 497-12147-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - BUL1102E - 038481-BUL1102E - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - BUL1102E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor, Npn, To-220; Transistor Polarity Stmicroelectronics - 25M7918 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUL1102E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 450V 4A 70W Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 497-12147-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-12147-ND
Single Bipolar Transistors 497-12147-ND
Bipolar (BJT) Transistor NPN 450V 4A 70W Through Hole TO-220

Bipolar (BJT) Transistor NPN 450V 4A 70W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BUL1102E - 038481-BUL1102E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BUL1102E
038481-BUL1102E
TRANSISTORS - Transistors (BJT) - Single - BUL1102E 038481-BUL1102E
Manufacturer: STMicroelectronics Win Source Part Number: 038481-BUL1102E Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 1.5V @ 400mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 12 @ 2A, 5V Maximum Power Dissipation: 70W Alternative Parts (Cross-Reference): FJP5021; BUL804; BUV46A; BUL1102E; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 038481-BUL1102E
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1.5V @ 400mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 12 @ 2A, 5V
Maximum Power Dissipation: 70W
Alternative Parts (Cross-Reference): FJP5021; BUL804; BUV46A; BUL1102E;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single Bipolar Transistors - BUL1102E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BUL1102E
Single Bipolar Transistors BUL1102E
TRANS NPN 450V 4A TO220

TRANS NPN 450V 4A TO220

Supplier's Site Datasheet
Transistor, Npn, To-220; Transistor Polarity Stmicroelectronics - 25M7918 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, To-220; Transistor Polarity Stmicroelectronics
25M7918
Transistor, Npn, To-220; Transistor Polarity Stmicroelectronics 25M7918
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:450V; Continuous Collector Current:2A; Power Dissipation:70W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:450V; Continuous Collector Current:2A; Power Dissipation:70W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BUL1102E
Bipolar Transistors - BJT BUL1102E
Bipolar Transistors - BJT High voltage fast switching NPN power transistor

Bipolar Transistors - BJT High voltage fast switching NPN power transistor

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BUL1102E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BUL1102E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BUL1102E
TRANS NPN 450V 4A TO220

TRANS NPN 450V 4A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 497-12147-ND 038481-BUL1102E BUL1102E 25M7918 BUL1102E BUL1102E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BUL1102E Single Bipolar Transistors Transistor, Npn, To-220; Transistor Polarity Stmicroelectronics Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3 TO-3; TO-220
IC(max) 4000 milliamps 4000 milliamps
VCEO 450 volts 450 volts
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