STMicroelectronics, Inc. Single Bipolar Transistors BU508AF

Description
TRANS NPN 700V 8A TO3PF
  • Single Bipolar Transistors - BU508AF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors (BJT) - Single - BU508AF - 012326-BU508AF - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 497-8748-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BU508AF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Power Bjt, Npn, 700V, 8A, Isowatt218Fx; Transistor Polarity Stmicroelectronics - 09R3318 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
TRANS NPN 700V 8A TO3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BU508AF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BU508AF
Single Bipolar Transistors BU508AF
TRANS NPN 700V 8A TO3PF

TRANS NPN 700V 8A TO3PF

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BU508AF - 012326-BU508AF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BU508AF
012326-BU508AF
TRANSISTORS - Transistors (BJT) - Single - BU508AF 012326-BU508AF
Manufacturer: STMicroelectronics Win Source Part Number: 012326-BU508AF Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: ISOWATT-218FX Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 700V Max Vce (sat): 1V @ 1.6A, 4.5A Collector Cut-off Current(Max): 200μA Typical Gain (hFE) (Min): 10 @ 100mA, 5V Maximum Power Dissipation: 50W Alternative Parts (Cross-Reference): BU508AFI; BU508AW; Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 012326-BU508AF
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: ISOWATT-218FX
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 700V
Max Vce (sat): 1V @ 1.6A, 4.5A
Collector Cut-off Current(Max): 200μA
Typical Gain (hFE) (Min): 10 @ 100mA, 5V
Maximum Power Dissipation: 50W
Alternative Parts (Cross-Reference): BU508AFI; BU508AW;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - 497-8748-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-8748-5-ND
Single Bipolar Transistors 497-8748-5-ND
Bipolar (BJT) Transistor NPN 700V 8A 50W Through Hole TO-3PF

Bipolar (BJT) Transistor NPN 700V 8A 50W Through Hole TO-3PF

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BU508AF
Bipolar Transistors - BJT BU508AF
Bipolar Transistors - BJT NPN Power Transistor

Bipolar Transistors - BJT NPN Power Transistor

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BU508AF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BU508AF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BU508AF
TRANS NPN 700V 8A TO3PF

TRANS NPN 700V 8A TO3PF

Supplier's Site
Power Bjt, Npn, 700V, 8A, Isowatt218Fx; Transistor Polarity Stmicroelectronics - 09R3318 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Power Bjt, Npn, 700V, 8A, Isowatt218Fx; Transistor Polarity Stmicroelectronics
09R3318
Power Bjt, Npn, 700V, 8A, Isowatt218Fx; Transistor Polarity Stmicroelectronics 09R3318
POWER BJT, NPN, 700V, 8A, ISOWATT218FX; Transistor Polarity:NPN; Collector Emitter Voltage Max:700V; Continuous Collector Current:8A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

POWER BJT, NPN, 700V, 8A, ISOWATT218FX; Transistor Polarity:NPN; Collector Emitter Voltage Max:700V; Continuous Collector Current:8A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BU508AF 012326-BU508AF 497-8748-5-ND BU508AF BU508AF 09R3318
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BU508AF Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Power Bjt, Npn, 700V, 8A, Isowatt218Fx; Transistor Polarity Stmicroelectronics
Polarity NPN; NPN NPN; NPN NPN NPN
Package Type TO-3; TO-3P-3 Full Pack SOT3; ISOWATT-218FX TO-3; TO-3P-3 Full Pack TO-3
IC(max) 8000 milliamps 8000 milliamps 8000 milliamps
VCEO 700 volts 700 volts 700 volts
Unlock Full Specs
to access all available technical data