STMicroelectronics, Inc. Single Bipolar Transistors BF259

Description
Bipolar (BJT) Transistor NPN 300V 100mA 90MHz 5W Through Hole TO-39
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 300V 100mA 90MHz 5W Through Hole TO-39
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - BF259-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BF259-ND
Single Bipolar Transistors BF259-ND
Bipolar (BJT) Transistor NPN 300V 100mA 90MHz 5W Through Hole TO-39

Bipolar (BJT) Transistor NPN 300V 100mA 90MHz 5W Through Hole TO-39

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BF259 - 1153075-BF259 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BF259
1153075-BF259
TRANSISTORS - Transistors (BJT) - Single - BF259 1153075-BF259
Manufacturer: STMicroelectronics Win Source Part Number: 1153075-BF259 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 5W Transistor Type: NPN Frequency - Transition: 90MHz Part Status: Obsolete(EOL) Family Name: BF259 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.st.com Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 300V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 6mA, 30mA Current - Collector Cutoff (Maximum): 50nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 25 @ 30mA, 10V Alternative Parts (Cross-Reference): BF259L; Introduction Date: August 21, 1995 ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1153075-BF259
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 200°C (TJ)
Package: TO-205AD, TO-39-3 Metal Can
Power - Max: 5W
Transistor Type: NPN
Frequency - Transition: 90MHz
Part Status: Obsolete(EOL)
Family Name: BF259
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-39
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 300V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 6mA, 30mA
Current - Collector Cutoff (Maximum): 50nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 25 @ 30mA, 10V
Alternative Parts (Cross-Reference): BF259L;
Introduction Date: August 21, 1995
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BF259 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BF259
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BF259
TRANS NPN 300V 0.1A TO39

TRANS NPN 300V 0.1A TO39

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BF259-ND 1153075-BF259 BF259
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BF259 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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