STMicroelectronics, Inc. Discrete Semiconductor Products BD682

Description
Manufacturer: STMicroelectronics Win Source Part Number: 011460-BD682 Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - Single Packaging: Tube Mounting Style: Through Hole Package: TO-225AA, TO-126-3 Manufacturer Device Package: SOT-32-3 Power - Max: 40W Voltage - Collector Emitter Breakdown (Max): 100V Current - Collector (Ic) (Max): 4A Transistor Type: PNP - Darlington Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500μA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - 011460-BD682 - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products
011460-BD682
Discrete Semiconductor Products 011460-BD682
Manufacturer: STMicroelectronics Win Source Part Number: 011460-BD682 Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - Single Packaging: Tube Mounting Style: Through Hole Package: TO-225AA, TO-126-3 Manufacturer Device Package: SOT-32-3 Power - Max: 40W Voltage - Collector Emitter Breakdown (Max): 100V Current - Collector (Ic) (Max): 4A Transistor Type: PNP - Darlington Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500μA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: STMicroelectronics
Win Source Part Number: 011460-BD682
Category: Discrete Semiconductor Products
Family: Transistors - Bipolar (BJT) - Single
Packaging: Tube
Mounting Style: Through Hole
Package: TO-225AA, TO-126-3
Manufacturer Device Package: SOT-32-3
Power - Max: 40W
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 4A
Transistor Type: PNP - Darlington
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500μA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Darlington Transistors
BD682
Darlington Transistors BD682
Darlington Transistors PNP Power Darlington

Darlington Transistors PNP Power Darlington

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD682 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD682
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD682
TRANS PNP DARL 100V 4A SOT32-3

TRANS PNP DARL 100V 4A SOT32-3

Supplier's Site
 - 2519893 - RS Components, Ltd.
Corby, Northants, United Kingdom
Trans Darlington PNP 100V 4A SOT32 - Discrete Semiconductors - Darlington Transistors

Trans Darlington PNP 100V 4A SOT32 - Discrete Semiconductors - Darlington Transistors

Supplier's Site
Thief River Falls, MN, United States
Single Bipolar Transistors
497-7178-5-ND
Single Bipolar Transistors 497-7178-5-ND
TRANS PNP DARL 100V 4A SOT32-3

TRANS PNP DARL 100V 4A SOT32-3

Supplier's Site Datasheet
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG - 70013763 - Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG
70013763
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG 70013763
TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG

TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG

Supplier's Site
Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity Stmicroelectronics - 64AH2631 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity Stmicroelectronics
64AH2631
Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity Stmicroelectronics 64AH2631
TRANSISTOR, PNP, -100V, -4A, SOT32; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:-4A; DC Current Gain hFE:750hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, PNP, -100V, -4A, SOT32; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:-4A; DC Current Gain hFE:750hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. DigiKey Allied Electronics, Inc. Newark, An Avnet Company
Product Category Transistors Darlington Transistors Bipolar RF Transistors Darlington Transistors Transistors Darlington Transistors Transistors
Product Number 011460-BD682 BD682 BD682 2519893 497-7178-5-ND 70013763 64AH2631
Product Name Discrete Semiconductor Products Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors TRANSISTOR, DARLINGTON PNP 4A 100V, TO225AA PKG Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity Stmicroelectronics
Polarity PNP PNP PNP PNP PNP
Package Type SOT3 SOT-32 TO-225AA, TO-126-3 SOT-32 TO-3
Packing Method Tube; Tube
IC(max) 4000 milliamps
VCEO 100 volts 100 volts
Unlock Full Specs
to access all available technical data

Similar Products

N-Channel Power MOSFET - BSC009NE2LS5 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 9.00E-4 ohms
View Details
60 V, 310 mA N-channel Trench MOSFET - 2N7002BKW,115 - Nexperia B.V.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
View Details
4 suppliers
 - ULS2022R/B - Rochester Electronics
Rochester Electronics
Specs
Package Type DIP16
Packing Method Tube; Tube
View Details
600V IGBT Intelligent Power Module (IPM) - BM64375S-VA - ROHM Semiconductor GmbH
Specs
TJ -40 to 125 C (-40 to 257 F)
Package Type HSDIP25
Packing Method Tube
View Details