STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5 77N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 198297-77N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 69A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 9800pF @ 100V Maximum Gate-Source Voltage: 25V Maximum Rds On at Id,Vgs: 38 mOhm @ 34.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5 - 198297-77N65M5 - Win Source Electronics
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 198297-77N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 69A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 9800pF @ 100V Maximum Gate-Source Voltage: 25V Maximum Rds On at Id,Vgs: 38 mOhm @ 34.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5 - 198297-77N65M5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5
198297-77N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5 198297-77N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 198297-77N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 69A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 9800pF @ 100V Maximum Gate-Source Voltage: 25V Maximum Rds On at Id,Vgs: 38 mOhm @ 34.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 198297-77N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 69A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 9800pF @ 100V
Maximum Gate-Source Voltage: 25V
Maximum Rds On at Id,Vgs: 38 mOhm @ 34.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 198297-77N65M5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 400000 milliwatts
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