STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 77N65M5 77N65M5

Manufacturer: STMicroelectronics
Win Source Part Number: 198297-77N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 69A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 9800pF @ 100V
Maximum Gate-Source Voltage: 25V
Maximum Rds On at Id,Vgs: 38 mOhm @ 34.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

MOSFET N-CH 650V 69A TO-247 Product overview: 77N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 69A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 69A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-77N65M5 can be used for catalog matching and distributor lookup.