STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Single - 2N6059 2N6059

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1124047-2N6059 Packaging: Tube Mounting Style: Chassis Mount Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-3 Status: Obsolete Temperature Range - Operating: 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Family Part Number: 2N6059 Manufacturer Pack Quantity: 20 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 120mA, 12A DC Current Gain (hFE) (Minimum) at Ic, Vce: 750 at 6A, 3V Maximum Power: 150W
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1124047-2N6059 Packaging: Tube Mounting Style: Chassis Mount Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-3 Status: Obsolete Temperature Range - Operating: 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Family Part Number: 2N6059 Manufacturer Pack Quantity: 20 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 120mA, 12A DC Current Gain (hFE) (Minimum) at Ic, Vce: 750 at 6A, 3V Maximum Power: 150W
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6059 - 1124047-2N6059 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6059
1124047-2N6059
TRANSISTORS - Transistors (BJT) - Single - 2N6059 1124047-2N6059
Manufacturer: STMicroelectronics Win Source Part Number: 1124047-2N6059 Packaging: Tube Mounting Style: Chassis Mount Transistor Type: NPN - Darlington Frequency - Transition: 4MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-3 Status: Obsolete Temperature Range - Operating: 200°C Manufacturer Homepage: www.mospec.com.tw Manufacturer Package: TO-204AA, TO-3 Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 100V Current - Collector Cutoff (Maximum): 1mA Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Application Field: Used in Industrial Family Part Number: 2N6059 Manufacturer Pack Quantity: 20 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 3V at 120mA, 12A DC Current Gain (hFE) (Minimum) at Ic, Vce: 750 at 6A, 3V Maximum Power: 150W

Manufacturer: STMicroelectronics
Win Source Part Number: 1124047-2N6059
Packaging: Tube
Mounting Style: Chassis Mount
Transistor Type: NPN - Darlington
Frequency - Transition: 4MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3
Status: Obsolete
Temperature Range - Operating: 200°C
Manufacturer Homepage: www.mospec.com.tw
Manufacturer Package: TO-204AA, TO-3
Current - Collector (Ic) (Maximum): 12A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Current - Collector Cutoff (Maximum): 1mA
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
Family Part Number: 2N6059
Manufacturer Pack Quantity: 20
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 3V at 120mA, 12A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 750 at 6A, 3V
Maximum Power: 150W

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Bipolar (BJT) Transistor NPN - Darlington 100V 12A 4MHz 150W Chassis Mount TO-3

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Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6059 - Shenzhen Shengyu Electronics Technology Limited
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1124047-2N6059 497-2561-5-ND 2N6059
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6059 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-3; SOT3 TO-3; TO-204AA, TO-3
Packing Method Tube; Tube Tube; Tube
TJ 200 C (392 F)
Power Gain 750 dB
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