STMicroelectronics, Inc. Single Bipolar Transistors 2N5657

Description
Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole SOT-32-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole SOT-32-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 497-2623-5-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-2623-5-ND
Single Bipolar Transistors 497-2623-5-ND
Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole SOT-32-3

Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole SOT-32-3

Buy Now Datasheet
Singapore
350V 0.5A Bipolar Transistor
276-2N5657
350V 0.5A Bipolar Transistor 276-2N5657
TRANS NPN 350V 0.5A SOT-32 Product overview: 2N5657 from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5657 can be used for catalog matching and distributor lookup.

TRANS NPN 350V 0.5A SOT-32 Product overview: 2N5657 from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 350V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5657 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N5657 - 1123990-2N5657 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5657
1123990-2N5657
TRANSISTORS - Transistors (BJT) - Single - 2N5657 1123990-2N5657
Manufacturer: STMicroelectronics Win Source Part Number: 1123990-2N5657 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-32-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: 2N5657 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10V Maximum Power: 20W

Manufacturer: STMicroelectronics
Win Source Part Number: 1123990-2N5657
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 10MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-32-3
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 350V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Family Part Number: 2N5657
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10V
Maximum Power: 20W

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5657 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5657
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5657
TRANS NPN 350V 0.5A SOT32-3

TRANS NPN 350V 0.5A SOT32-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 497-2623-5-ND 276-2N5657 1123990-2N5657 2N5657
Product Name Single Bipolar Transistors 350V 0.5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2N5657 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-225AA, TO-126-3 SOT3
IC(max) 500 milliamps 500 milliamps
VCEO 350 volts 350 volts
PD 20000 milliwatts
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