STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Single - 2N5657 2N5657

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1123990-2N5657 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-32-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: 2N5657 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10V Maximum Power: 20W
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1123990-2N5657 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-32-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: 2N5657 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10V Maximum Power: 20W
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N5657 - 1123990-2N5657 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N5657
1123990-2N5657
TRANSISTORS - Transistors (BJT) - Single - 2N5657 1123990-2N5657
Manufacturer: STMicroelectronics Win Source Part Number: 1123990-2N5657 Packaging: Tube Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 10MHz Categories: Discrete Semiconductor Products Supplier Device Package: SOT-32-3 Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 350V Current - Collector Cutoff (Maximum): 100μA Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited Family Part Number: 2N5657 Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10V Maximum Power: 20W

Manufacturer: STMicroelectronics
Win Source Part Number: 1123990-2N5657
Packaging: Tube
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 10MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-32-3
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 350V
Current - Collector Cutoff (Maximum): 100μA
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Family Part Number: 2N5657
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 10V at 100mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 100mA, 10V
Maximum Power: 20W

Buy Now
Single Bipolar Transistors - 497-2623-5-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
497-2623-5-ND
Single Bipolar Transistors 497-2623-5-ND
Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole SOT-32-3

Bipolar (BJT) Transistor NPN 350V 500mA 10MHz 20W Through Hole SOT-32-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5657 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5657
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5657
TRANS NPN 350V 0.5A SOT32-3

TRANS NPN 350V 0.5A SOT32-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors
Product Number 1123990-2N5657 497-2623-5-ND 2N5657
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N5657 Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT3 TO-225AA, TO-126-3
Packing Method Tube; Tube Tube; Tube
TJ 150 C (302 F)
Power Gain 30 dB
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