STMicroelectronics TRANSISTORS - RF Transistors (BJT) - 2N5551HR 2N5551HR

Manufacturer: STMicroelectronics
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036409-2N5551HR
Number of Pins: 3
Categories: RF Transistors(BJT)
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 200 °C
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: Yes
Min Operating Temperature: -65 °C
Max Power Dissipation: 360 mW
Collector Base Voltage (VCBO): 180 V
Collector Emitter Voltage (VCEO): 160 V
Max Collector Current: 600 mA

NPN BJT Transistor 160V 0.6A TO-18 3-Pin Through Hole Product overview: 2N5551HR from STMicroelectronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 160V, 0.6A. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 160V, 0.6A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2N5551HR can be used for catalog matching and distributor lookup.