Spansion, Inc. Integrated Circuits (ICs) - Memory S34MS02G204BHI010

Description
Win Source Part Number: 1024927-S34MS02G204B HI010 Category: Integrated Circuits (ICs)>Memory Series: MS-2 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45 ns Voltage - Supply: 1.7V ~ 1.95V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Alternative Parts (Cross-Reference): S34ML01G200BHI000; S34MS01G100BHI000; S34MS02G104BHI010; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Mfr: Spansion Other Names: 2156-S34MS02G204BHI0 10,CYPSPAS34MS02G204 BHI010
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Description
Win Source Part Number: 1024927-S34MS02G204B HI010 Category: Integrated Circuits (ICs)>Memory Series: MS-2 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45 ns Voltage - Supply: 1.7V ~ 1.95V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Alternative Parts (Cross-Reference): S34ML01G200BHI000; S34MS01G100BHI000; S34MS02G104BHI010; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Mfr: Spansion Other Names: 2156-S34MS02G204BHI0 10,CYPSPAS34MS02G204 BHI010
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Datasheet
Datasheet Summary
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The S34MS02G204BHI010 is a 2 Gbit SLC NAND Flash Memory device from Quarktwin Technology Ltd., designed for embedded applications. It features a supply voltage range of 1.7V to 1.95V and supports both x8 and x16 I/O bus widths. The device architecture includes a page size of 2048 + 128 bytes for x8 and 1024 + 64 words for x16 configurations. This memory device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and offers a range of advanced features, including a One Time Programmable (OTP) area, unique serial number support, and hardware program/erase disable during power transitions. The S34MS02G204BHI010 supports multiplane program and erase commands, as well as a read cache feature, enhancing its performance in data handling. In terms of reliability, the device is rated for 100,000 program/erase cycles and has a typical data retention of 10 years. It operates within an industrial temperature range of -40¬8C to 85¬8C, making it suitable for a variety of demanding environments. The package options include a 63-ball BGA configuration, facilitating integration into compact designs. Engineers considering this product should evaluate its specifications against their project requirements, particularly in terms of density, performance, and environmental resilience.

Datasheet Summary
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The S34MS02G204BHI010 is a 2 Gbit SLC NAND Flash Memory device from Quarktwin Technology Ltd., designed for embedded applications. It features a supply voltage range of 1.7V to 1.95V and supports both x8 and x16 I/O bus widths. The device architecture includes a page size of 2048 + 128 bytes for x8 and 1024 + 64 words for x16 configurations. This memory device is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and offers a range of advanced features, including a One Time Programmable (OTP) area, unique serial number support, and hardware program/erase disable during power transitions. The S34MS02G204BHI010 supports multiplane program and erase commands, as well as a read cache feature, enhancing its performance in data handling. In terms of reliability, the device is rated for 100,000 program/erase cycles and has a typical data retention of 10 years. It operates within an industrial temperature range of -40¬8C to 85¬8C, making it suitable for a variety of demanding environments. The package options include a 63-ball BGA configuration, facilitating integration into compact designs. Engineers considering this product should evaluate its specifications against their project requirements, particularly in terms of density, performance, and environmental resilience.

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Integrated Circuits (ICs) - Memory - 1024927-S34MS02G204BHI010 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1024927-S34MS02G204BHI010
Integrated Circuits (ICs) - Memory 1024927-S34MS02G204BHI010
Win Source Part Number: 1024927-S34MS02G204B HI010 Category: Integrated Circuits (ICs)>Memory Series: MS-2 Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 2Gb (128M x 16) Access Time: 45 ns Voltage - Supply: 1.7V ~ 1.95V Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: FLASH Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Alternative Parts (Cross-Reference): S34ML01G200BHI000; S34MS01G100BHI000; S34MS02G104BHI010; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0051 Mfr: Spansion Other Names: 2156-S34MS02G204BHI0 10,CYPSPAS34MS02G204 BHI010

Win Source Part Number: 1024927-S34MS02G204BHI010
Category: Integrated Circuits (ICs)>Memory
Series: MS-2
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 45 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): S34ML01G200BHI000; S34MS01G100BHI000; S34MS02G104BHI010;
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0051
Mfr: Spansion
Other Names: 2156-S34MS02G204BHI010,CYPSPAS34MS02G204BHI010

Buy Now Datasheet
Memory - S34MS02G204BHI010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 45 ns 63-BGA (11x9)

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Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 1024927-S34MS02G204BHI010 S34MS02G204BHI010
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Access Time 45 ns 45 ns
Cycle Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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