Spansion, Inc. Memory S34ML02G104BHA013

Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Description
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)
Datasheet
Datasheet Summary
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The S34ML02G104BHA013 is a 2 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd. It features an 8-bit and 16-bit input/output bus width, with a page size of 1056 words (1024 + 32 words spare) for x16 configuration. The device supports a maximum random access time of 25 ¬µs and a minimum sequential access time of 25 ns, with a typical program time of 200 ¬µs. Block erase time is approximately 3.5 ms. This memory device is designed for embedded applications and operates at a supply voltage of 3.3 V, with a range of 2.7 V to 3.6 V. It offers a reliability of 100,000 program/erase cycles and a data retention period of 10 years. The S34ML02G104BHA013 is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and includes features such as a One Time Programmable (OTP) area and support for multiplane program and erase commands. The device is available in a 63-ball BGA package, measuring 9 mm x 11 mm, and is suitable for industrial and automotive applications with operating temperature ranges of -40 ¬8C to 85 ¬8C and -40 ¬8C to 105 ¬8C, respectively.

Datasheet Summary
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The S34ML02G104BHA013 is a 2 Gb SLC NAND Flash memory device from Quarktwin Technology Ltd. It features an 8-bit and 16-bit input/output bus width, with a page size of 1056 words (1024 + 32 words spare) for x16 configuration. The device supports a maximum random access time of 25 ¬µs and a minimum sequential access time of 25 ns, with a typical program time of 200 ¬µs. Block erase time is approximately 3.5 ms. This memory device is designed for embedded applications and operates at a supply voltage of 3.3 V, with a range of 2.7 V to 3.6 V. It offers a reliability of 100,000 program/erase cycles and a data retention period of 10 years. The S34ML02G104BHA013 is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and includes features such as a One Time Programmable (OTP) area and support for multiplane program and erase commands. The device is available in a 63-ball BGA package, measuring 9 mm x 11 mm, and is suitable for industrial and automotive applications with operating temperature ranges of -40 ¬8C to 85 ¬8C and -40 ¬8C to 105 ¬8C, respectively.

Suppliers

Company
Product
Description
Supplier Links
Memory - S34ML02G104BHA013 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

FLASH - NAND Memory IC 2Gbit Parallel 63-BGA (11x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S34ML02G104BHA013 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S34ML02G104BHA013
Integrated Circuits (ICs) - Memory - Memory S34ML02G104BHA013
IC FLASH 2GBIT PARALLEL 63BGA

IC FLASH 2GBIT PARALLEL 63BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S34ML02G104BHA013 S34ML02G104BHA013
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
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