Spansion, Inc. Memory S29PL127J70BAW020

Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-FBGA (8x11.6)
Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-FBGA (8x11.6)
Datasheet
Datasheet Summary
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The S29PL127J70BAW020 is a 128 Mbit (8 M x 16-bit) CMOS Flash memory device from Quarktwin Technology Ltd. It operates on a single power supply voltage range of 2.7 to 3.6 volts, making it suitable for battery-powered applications. This device features a page mode architecture with a page size of 8 words, allowing for fast page read access and simultaneous read/write operations across its four separate banks. The memory supports high-speed performance with page access times as fast as 20 ns and random access times of 55 ns. It includes features such as dual chip enable inputs for enhanced control, and an Enhanced VersatileI/O control that allows for flexible voltage levels on I/O pins. The device is compatible with the JEDEC 42.4 standard and offers a variety of software features, including erase suspend/resume capabilities and a command set that is backward compatible with several other Flash memory families. Data retention is specified at 20 years, with a cycling endurance of 1 million cycles per sector. The S29PL127J70BAW020 is available in a 64-ball Fine-pitch BGA package, facilitating integration into various designs. This product is ideal for applications requiring high performance and flexibility in memory operations.

Datasheet Summary
Powered by GS/AI

The S29PL127J70BAW020 is a 128 Mbit (8 M x 16-bit) CMOS Flash memory device from Quarktwin Technology Ltd. It operates on a single power supply voltage range of 2.7 to 3.6 volts, making it suitable for battery-powered applications. This device features a page mode architecture with a page size of 8 words, allowing for fast page read access and simultaneous read/write operations across its four separate banks. The memory supports high-speed performance with page access times as fast as 20 ns and random access times of 55 ns. It includes features such as dual chip enable inputs for enhanced control, and an Enhanced VersatileI/O control that allows for flexible voltage levels on I/O pins. The device is compatible with the JEDEC 42.4 standard and offers a variety of software features, including erase suspend/resume capabilities and a command set that is backward compatible with several other Flash memory families. Data retention is specified at 20 years, with a cycling endurance of 1 million cycles per sector. The S29PL127J70BAW020 is available in a 64-ball Fine-pitch BGA package, facilitating integration into various designs. This product is ideal for applications requiring high performance and flexibility in memory operations.

Suppliers

Company
Product
Description
Supplier Links
Memory - S29PL127J70BAW020 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-FBGA (8x11.6)

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-FBGA (8x11.6)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S29PL127J70BAW020 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S29PL127J70BAW020
Integrated Circuits (ICs) - Memory - Memory S29PL127J70BAW020
IC FLASH 128MBIT PARALLEL 64FBGA

IC FLASH 128MBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S29PL127J70BAW020 S29PL127J70BAW020
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 70 ns
Operating Temperature -25 to 85 C (-13 to 185 F)
Density 128000 kbits 128000 kbits
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