Spansion, Inc. Memory S29GL256N90FAIR10A

Description
S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
Request a Quote Datasheet
Description
S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - S29GL256N90FAIR10A - Rochester Electronics
Newburyport, MA, United States
S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

S29GL256N - 256 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit

Supplier's Site Datasheet
Memory - S29GL256N90FAIR10A - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S29GL256N90FAIR10A - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
S29GL256N90FAIR10A
Integrated Circuits (ICs) - Memory - Memory S29GL256N90FAIR10A
S29GL256N - PARALLEL NOR MIRRORB

S29GL256N - PARALLEL NOR MIRRORB

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number S29GL256N90FAIR10A S29GL256N90FAIR10A S29GL256N90FAIR10A
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS0xGPS08PB-4108/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000000 kbits
View Details
Memory - 00002444259 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
SmartMedia Cards - 7723176 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64 kbits
View Details
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details