Spansion, Inc. Memory S29GL128N11TFVR10

Description
FLASH - NOR Memory IC 128Mbit Parallel 110 ns 56-TSOP
Datasheet
Description
FLASH - NOR Memory IC 128Mbit Parallel 110 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL128N11TFVR10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 128Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - S29GL128N11TFVR10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
S29GL128N11TFVR10
Integrated Circuits (ICs) - Memory - Memory S29GL128N11TFVR10
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number S29GL128N11TFVR10 S29GL128N11TFVR10
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Non-Volatile
Access Time 110 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXXXXX16MP16PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 93Z451LMQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details