Solid State, Inc. Bipolar RF Transistors 2N5583

Description
PNP SIL RF TO39
  • Bipolar RF Transistors - 2N5583 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5583 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
PNP SIL RF TO39
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 2N5583 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2N5583
Bipolar RF Transistors 2N5583
PNP SIL RF TO39

PNP SIL RF TO39

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N5583 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N5583
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N5583
PNP SIL RF TO39

PNP SIL RF TO39

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 2N5583 2N5583
Product Name Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
Package Type TO-39; TO-205AD, TO-39-3 Metal Can
IC(max) 500 milliamps
VCEO 30 volts 30 volts
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