SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0160120D

S3M0160120D is a silicon carbide power MOSFET designed for high-efficiency switching applications such as EV fast charging, solar inverters, and ESS. It is packaged in a TO-247-3 case with a maximum drain-source voltage of 1200 V and a typical on-resistance of 160 mΩ at 25°C. The device supports a continuous drain current of 19 A at 25°C and 14 A at 100°C, with a power dissipation of 163 W at 25°C case temperature. It features a positive temperature coefficient for easy paralleling, a fast intrinsic body diode with reverse recovery charge of 66 nC, and a junction temperature range of -55°C to +175°C. Thermal resistance from junction to case is 0.92°C/W. The part is AEC-Q101 qualified and meets UL 94 V-0 for molding resin. Recommended gate drive is -4 V to turn off and 18 V to turn on.