SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0080120N

S3M0080120N is a silicon carbide power MOSFET designed for high-efficiency switching applications such as EV fast charging, solar inverters, and UPS systems. It is packaged in a SOT-227 and features a drain-source voltage rating of 1200 V, a typical on-resistance of 80 mΩ at VGS = 18 V and 25 °C, and a continuous drain current of 36 A at 25 °C. The device supports a junction temperature range of -55 °C to 175 °C, with a thermal resistance junction-to-case of 0.61 °C/W. It is AEC-Q101 qualified. Gate drive recommendations specify a turn-on voltage of 18 V and turn-off voltage of -4 V, and the intrinsic body diode exhibits a forward voltage of 3.8 V at 175 °C and 7.5 A. Switching performance includes a turn-off energy of 2 μJ under specified conditions.