SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S3M0040120N

The S3M0040120N is a 1200V silicon carbide power MOSFET in a SOT-227 package, designed for applications such as EV fast charging, solar inverters, and industrial UPS systems. It features a typical drain-source on-state resistance of 40 mΩ at 18 V gate voltage and 25°C, with a maximum continuous drain current of 46 A at 100°C. The device has a junction temperature range of -55°C to 175°C and a thermal resistance junction-to-case of 0.31°C/W. It is AEC-Q101 qualified. The intrinsic body diode exhibits a reverse recovery time of 16 ns at 175°C and 40 A current. The gate-source voltage is rated up to 22 V dynamic and -4 V to +18 V static, with a recommended turn-on voltage of 18 V and turn-off voltage of -4 V.