The S3M0012120N is a 1200V silicon carbide power MOSFET in a SOT-227 package, designed for high-efficiency power conversion in EV charging, solar inverters, and UPS systems. It has a typical on-state resistance of 12 mΩ at 25°C and 19 mΩ at 175°C, with a continuous drain current of 155 A at 25°C case temperature. The device features a robust intrinsic body diode with reverse recovery time of 25 ns at 175°C and supports gate drive voltages from -4 V to 18 V. Thermal resistance junction-to-case is 0.16 °C/W, and the operating junction temperature ranges from -55 °C to +175 °C. The part is AEC-Q101 qualified and meets UL 94 V-0 flammability requirements for molding resin.
SILICON CARBIDE MOSFET, 12MOHM,1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1655-S3M0012120N-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
