SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0160120D

Description
MOSFET SILICON CARBIDE SIC 1200V
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Description
MOSFET SILICON CARBIDE SIC 1200V
Request a Quote
Datasheet
Datasheet Summary
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S2M0160120D is a 1200V silicon carbide MOSFET in a TO-247AD package, designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a typical on-resistance of 175 mΩ at 25°C and 300 mΩ at 175°C, with a continuous drain current of 17 A at 25°C and 12 A at 100°C. The device features fast switching with turn-on and turn-off energies of 90.3 nJ and 54.5 nJ respectively, and a robust intrinsic body diode with reverse recovery time of 6.6 ns. It is AEC-Q101 qualified and operates with a junction temperature range of -55°C to +175°C. Thermal resistance junction-to-case is 1.15°C/W, and the molding resin meets UL 94 V-0.

Datasheet Summary
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S2M0160120D is a 1200V silicon carbide MOSFET in a TO-247AD package, designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a typical on-resistance of 175 mΩ at 25°C and 300 mΩ at 175°C, with a continuous drain current of 17 A at 25°C and 12 A at 100°C. The device features fast switching with turn-on and turn-off energies of 90.3 nJ and 54.5 nJ respectively, and a robust intrinsic body diode with reverse recovery time of 6.6 ns. It is AEC-Q101 qualified and operates with a junction temperature range of -55°C to +175°C. Thermal resistance junction-to-case is 1.15°C/W, and the molding resin meets UL 94 V-0.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 1655-S2M0160120D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1655-S2M0160120D-ND
Single FETs, MOSFETs 1655-S2M0160120D-ND
MOSFET SILICON CARBIDE SIC 1200V

MOSFET SILICON CARBIDE SIC 1200V

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1655-S2M0160120D-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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