S2M0160120D is a 1200V silicon carbide MOSFET in a TO-247AD package, designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a typical on-resistance of 175 mΩ at 25°C and 300 mΩ at 175°C, with a continuous drain current of 17 A at 25°C and 12 A at 100°C. The device features fast switching with turn-on and turn-off energies of 90.3 nJ and 54.5 nJ respectively, and a robust intrinsic body diode with reverse recovery time of 6.6 ns. It is AEC-Q101 qualified and operates with a junction temperature range of -55°C to +175°C. Thermal resistance junction-to-case is 1.15°C/W, and the molding resin meets UL 94 V-0.
MOSFET SILICON CARBIDE SIC 1200V
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1655-S2M0160120D-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |