S2M0080120N is a 1200V silicon carbide n-channel enhancement-mode MOSFET in a SOT-227 package, designed for high-frequency power applications such as EV charging and solar inverters. It has a drain-source on-state resistance of 77 mΩ at 25°C and can handle a continuous drain current of 36 A at 25°C. The device features low switching losses, a fast intrinsic body diode, and positive temperature characteristics for easy paralleling. It operates with a junction temperature range of -55°C to 175°C and has a thermal resistance of 0.85°C/W from junction to case. The gate threshold voltage is 1.8 V at 175°C, and the internal gate resistance is 3.3 Ω.
MOSFET SILICON CARBIDE SIC 1200V
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1655-S2M0080120N-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
