SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0040120N2

The S2M0040120N2 is a 1200 V silicon carbide power MOSFET with an integrated silicon carbide Schottky barrier diode, designed for high-efficiency power conversion in applications such as EV charging, solar inverters, and UPS systems. It is packaged in a SOT-227 case measuring 37.8-38.2 mm in length, 24.8-25.2 mm in width, and 29.9-30.5 mm in height, with a mass of 27 g. The device has a maximum continuous drain current of 40 A at 100 °C and a drain-source on-resistance of 52 mΩ at 25 °C. It operates with a junction temperature range of -55 °C to 175 °C and meets AEC-Q101 qualification. The module features copper-based DBC isolation, nickel-plated terminals and base plate, and an isolation test voltage of 2.5 kV RMS. The molding resin complies with UL 94 V-0.