S2M0025120K is a single silicon carbide power MOSFET in a TO-247-4 package, rated for 1200 V drain-source voltage and 63 A continuous drain current at 25°C with a typical on-resistance of 25 mΩ. It features low switching losses, a fast intrinsic body diode, and positive temperature coefficient for parallel operation. The device supports junction temperatures from -55°C to 175°C and has a thermal resistance of 0.28 °C/W from junction to case. It is designed for high-frequency applications such as EV charging, solar inverters, and UPS systems.
MOSFET SILICON CARBIDE SIC 1200V
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1655-S2M0025120K-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
