SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0016120D

The S2M0016120D is a 1200V silicon carbide power MOSFET in a TO-247AD package designed for high-efficiency switching applications such as EV fast charging, solar inverters, and energy storage systems. It has a typical on-resistance of 16 mΩ at 25°C and 29 mΩ at 175°C, with a continuous drain current of 100 A at 100°C and a pulsed drain current of 314 A. The device features fast switching speed, low switching losses, and an intrinsic body diode with a reverse recovery time of 37 ns at 175°C. Junction temperature ranges from -55°C to 175°C, with a thermal resistance of 0.21 °C/W from junction to case. The device is AEC-Q101 qualified.