SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S1M1000170K

S1M1000170K is a 1700 V silicon carbide power MOSFET in a TO-247-4 package, designed for high-frequency, energy-efficient applications such as EV charging and solar inverters. It has a typical on-resistance of 1 Ω at 25 °C and a continuous drain current of 5.2 A at 25 °C. The device features a positive temperature coefficient, fast switching with low switching losses, and a robust intrinsic body diode with a reverse recovery time of 6 ns at 25 °C. It operates with a junction temperature range of -55 °C to 175 °C and has a thermal resistance of 1.85 °C/W from junction to case. The part is AEC-Q101 qualified and uses UL 94 V-0 rated epoxy molding compound.