SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S1M1000170D

S1M1000170D is a 1700 V silicon carbide n-channel enhancement mode MOSFET in a TO-247-3 package, designed for high-frequency, energy-efficient power conversion in applications such as EV charging, solar inverters, and UPS systems. It has a typical on-resistance of 1 Ω at 25 °C and a continuous drain current of 5.2 A at 25 °C, with peak pulsed current capability of 15 A. The device features a robust intrinsic body diode, low switching losses, and operates with a junction temperature range of -55 °C to +175 °C. Thermal resistance from junction to case is 1.85 °C/W. It is AEC-Q101 qualified and complies with UL 94 V-0 for molding resin.