Silicon Motion, Inc. Memory SM662GXD BESS

Description
FLASH - NAND (TLC) Memory IC eMMC 100-BGA (14x18)
Request a Quote Datasheet
Description
FLASH - NAND (TLC) Memory IC eMMC 100-BGA (14x18)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 1984-SM662GXDBESS-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND (TLC) Memory IC eMMC 100-BGA (14x18)

FLASH - NAND (TLC) Memory IC eMMC 100-BGA (14x18)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - SM662GXD BESS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
SM662GXD BESS
Integrated Circuits (ICs) - Memory - Memory SM662GXD BESS
IC FLASH EMMC 100BGA

IC FLASH EMMC 100BGA

Supplier's Site
Memory - SM662GXD BESS - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND (TLC) Memory IC eMMC 100-BGA (14x18)

FLASH - NAND (TLC) Memory IC eMMC 100-BGA (14x18)

Buy Now
FERRI EMMC 40GB BICS4 3D TLC (10

FERRI EMMC 40GB BICS4 3D TLC (10

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1984-SM662GXDBESS-ND SM662GXD BESS SM662GXD BESS SM662GXD BESS
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Memory - S25FL064P0XBHIS30 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
Memory - 28294110 D - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details