Silicon Motion, Inc. Memory SM662GBD-BESS

Description
FLASH - NAND (SLC), FLASH - NAND (TLC) Memory IC 320Gbit eMMC 100-BGA (14x18)
Datasheet
Description
FLASH - NAND (SLC), FLASH - NAND (TLC) Memory IC 320Gbit eMMC 100-BGA (14x18)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SM662GBD-BESS - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND (SLC), FLASH - NAND (TLC) Memory IC 320Gbit eMMC 100-BGA (14x18)

FLASH - NAND (SLC), FLASH - NAND (TLC) Memory IC 320Gbit eMMC 100-BGA (14x18)

Buy Now Datasheet
FERRI-EMCC 3D 40GB SLC 100BGA

FERRI-EMCC 3D 40GB SLC 100BGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - SM662GBD-BESS - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
SM662GBD-BESS
Integrated Circuits (ICs) - Memory - Memory SM662GBD-BESS
IC FLASH 320GBIT EMMC 100BGA

IC FLASH 320GBIT EMMC 100BGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number SM662GBD-BESS SM662GBD-BESS SM662GBD-BESS
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 71024S12YG8 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details