Shenzhen Shengyu Electronics Technology Limited Discrete Semiconductor Products - Transistors - FETs, MOSFETs EPC2110ENGRT

Description
GANFET 2N-CH 120V 3.4A DIE
Description
GANFET 2N-CH 120V 3.4A DIE

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - EPC2110ENGRT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
EPC2110ENGRT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs EPC2110ENGRT
GANFET 2N-CH 120V 3.4A DIE

GANFET 2N-CH 120V 3.4A DIE

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors
Product Number EPC2110ENGRT
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 17280780 - Radwell International
Infineon Technologies AG
View Details
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor - T2G4005528-FS - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers
Interfet -  - Micross Components, Inc.
Micross Components, Inc.
View Details