LCSC Electronics Technology (HK) Limited Triode/MOS Tube/Transistor >> MOSFETs RU3060L

Description
30V 53A 50W 13mΩ@10V,30A 2.7V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
Datasheet
Description
30V 53A 50W 13mΩ@10V,30A 2.7V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
RU3060L
Triode/MOS Tube/Transistor >> MOSFETs RU3060L
30V 53A 50W 13mΩ@10V,30A 2.7V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS

30V 53A 50W 13mΩ@10V,30A 2.7V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RU3060L
Product Name Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel
V(BR)DSS 30 volts
VGS(off) 2.7 volts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 1727-7668-2-ND - DigiKey
Nexperia B.V.
Single FETs, MOSFETs
BUK6Y12-30PX
Specs
Polarity P-Channel
Package Type SC-100, SOT-669
Transistor Grade / Operating Range Automotive
View Details
3 suppliers
Advanced Linear Devices, Inc.
MOSFET
ALD310500PAL
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M1H - AIMDQ75R016M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M1H
AIMDQ75R016M1H
Specs
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
Package Type PG-HDSOP-22
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ612-TD-E - 855351-2SJ612-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ612-TD-E
2SJ612-TD-E
Specs
Package Type SOT3
View Details