LCSC Electronics Technology (HK) Limited Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MMDT3904DW

Description
40V 200mW 100@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS
Datasheet
Description
40V 200mW 100@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS
Datasheet

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Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
MMDT3904DW
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MMDT3904DW
40V 200mW 100@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS

40V 200mW 100@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS

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Technical Specifications

  LCSC Electronics Technology (HK) Limited
Product Category Bipolar RF Transistors
Product Number MMDT3904DW
Product Name Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Polarity NPN
IC(max) 200 milliamps
VCEO 40 volts
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