LCSC Electronics Technology (HK) Limited Triode/MOS Tube/Transistor >> MOSFETs HSS2301C

Description
20V 2.9A 100mΩ@4.5V,3A 1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
Datasheet
Description
20V 2.9A 100mΩ@4.5V,3A 1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
HSS2301C
Triode/MOS Tube/Transistor >> MOSFETs HSS2301C
20V 2.9A 100mΩ@4.5V,3A 1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS

20V 2.9A 100mΩ@4.5V,3A 1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number HSS2301C
Product Name Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
VGS(off) 1 volts
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZA75R008M1H - AIMZA75R008M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZA75R008M1H
AIMZA75R008M1H
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
- LM25101CMA/NOPB - Rochester Electronics
Texas Instruments
LM25101CMA/NOPB
Specs
Package Type SOIC8
Packing Method Tube; Tube
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E - 855342-2SJ317NYTR-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ317NYTR-E
2SJ317NYTR-E
Specs
Package Type SOT3
View Details
60 V, 320 mA dual N-channel Trench MOSFET - 2N7002PS,115 - Nexperia B.V.
Nexperia B.V.
60 V, 320 mA dual N-channel Trench MOSFET
2N7002PS,115
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 320000 milliamps
View Details
7 suppliers