Semtech Corp. Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MMBT5551

Description
160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Datasheet
Description
160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Datasheet

Suppliers

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Description
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Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
MMBT5551
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MMBT5551
160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS

160V 350mW 80@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet

Technical Specifications

  LCSC Electronics Technology (HK) Limited
Product Category Bipolar RF Transistors
Product Number MMBT5551
Product Name Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Polarity NPN
Package Type SOT23
IC(max) 600 milliamps
VCEO 160 volts
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