SemiQ Inc. Single FETs, MOSFETs GP3T040A120H

The GP3T040A120H is a 1200V silicon carbide MOSFET designed for high-efficiency switching in applications such as solar inverters, EV charging stations, and motor drives. It is packaged in a TO-247-4L with a drain-source on-resistance of 38 mΩ at 25°C and a continuous drain current of 62 A at TC=25°C. The device has a maximum junction temperature of 175°C and is avalanche tested to 330 mJ. Its thermal resistance from junction to case is 0.49 to 0.61 °C/W. The part features a driver source pin for improved gate driving and meets RoHS compliance standards.