The GCMX080C120S1-E1 is a 1200 V silicon carbide MOSFET power module in a SOT-227 package, designed for high-efficiency switching applications such as photovoltaic inverters and server power supplies. It has a continuous drain current rating of 28 A at 25°C case temperature and a drain-source on-resistance of 84 mΩ at 25°C with 18 V gate voltage. The device operates with a maximum junction temperature of 175°C and features a Kelvin source for stable gate control and an isolated backplate for direct heatsink mounting. It is rated for 160 mJ single-pulse avalanche energy, has a thermal resistance from junction to case of 1.01 to 1.28 °C/W, and meets RoHS compliance. The package measures 31.67 to 31.90 mm in length, 7.95 to 8.18 mm in width, and 4.14 to 4.24 mm in height.
GEN3 1200V 80M SIC MOSFET MODULE
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX080C120S1-E1-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
