GCMX080A120B2H2P is a 1200 V silicon carbide full-bridge module with a continuous drain current of 27 A at 25°C case temperature and a drain-source on-resistance of 77 mΩ. It features a press-fit terminal connection, split DC negative terminals, and a Kelvin reference for stable operation. The module has a junction-to-case thermal resistance of 1.07-1.26 °C/W, operates with a maximum junction temperature of 175°C, and is isolated for direct heatsink mounting. It meets RoHS compliance per Directive 2011/65/EC. The package dimensions and mounting torque for M4-0.7 screws are specified, and it includes an integrated NTC thermistor with 5 kΩ resistance at 25°C. The device is designed for photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-DC converters.
1200V, 80M SIC MOSFET FULL BRIDG
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX080A120B2H2P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
