GCMX040A120B2B1P is a 1200 V silicon carbide half-bridge module with a continuous drain current of 56 A at 25°C case temperature and a drain-source on-resistance of 38 mΩ. It features a press-fit terminal connection, isolated package for direct heatsink mounting, and a Kelvin source for stable gate driving. The module has a junction-to-case thermal resistance of 0.61°C/W, a maximum junction temperature of 175°C, and an isolation voltage of 3000 V. The package measures 21 g in weight with press-fit pin hole dimensions of 0.99 to 1.09 mm. It complies with RoHS Directive 2011/65/EC. The part includes an integrated NTC thermistor with 5.0 kΩ resistance at 25°C and a beta value of 3380 K from 25°C to 50°C.
1200V, 40M SIC MOSFET HALF BRIDG
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX040A120B2B1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
