SemiQ Inc. Single FETs, MOSFETs GCMX034C120S1-E1

The GCMX034C120S1-E1 is a 1200 V silicon carbide (SiC) MOSFET power module in a SOT-227 package, designed for high-efficiency switching applications such as photovoltaic inverters, server power supplies, and energy storage systems. It has a continuous drain current of 51 A at 25°C and a drain-source on-resistance of 34 mΩ at 25°C and 18 V gate voltage. The device supports a maximum junction temperature of 175°C, with a thermal resistance from junction to case of 0.66-0.82 °C/W and an isolated backplate for direct heatsink mounting. It is avalanche-rated to 330 mJ and features a Kelvin source connection for stable gate drive. The package dimensions conform to SOT-227 standards, with a weight of 32 g. The part complies with RoHS 2 directives and meets JEDEC temperature cycle qualification JESD22-A104 Condition G.