GCMX034B120B2T1P is a 1200V silicon carbide (SiC) six-pack MOSFET module designed for high-efficiency power conversion in applications such as photovoltaic inverters, battery chargers, and DC-DC converters. The module features press-fit terminal connections, split DC negative terminals, and a Kelvin gate configuration for stable switching. It has a continuous drain current rating of 30 A at 25°C and 65°C, with a maximum junction temperature of 175°C. The drain-source on-resistance is 34 mΩ at 25°C and 20 A gate-source voltage. Thermal resistance from junction to case is 0.80-0.94 °C/W, and isolation voltage is 3000 V RMS. The package weighs 40 g and supports direct mounting to a heatsink. The module meets ROHS3 compliance.
GEN3 1200V 34M SIC MOSFET SIX-PA
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX034B120B2T1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
