GCMX020A120B2H2P is a 1200V silicon carbide full-bridge module with integrated SiC MOSFETs and body diodes, designed for high-efficiency power conversion in photovoltaic inverters, battery chargers, and DC-DC converters. It features a press-fit terminal package with isolated mounting for direct heatsink attachment, measuring 40 g in weight. The module handles a continuous drain current of 102 A at 25℃ case temperature and 88 A at 65℃, with a drain-source on-resistance of 17.5 mΩ at 25℃ and 50 A. Its junction-to-case thermal resistance is 0.40-0.45 °C/W, and it operates with a maximum junction temperature of 175℃. The device is rated for 3000 V isolation and includes an NTC thermistor with 5 kΩ resistance at 25℃.
1200V, 20M SIC MOSFET FULL BRIDG
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX020A120B2H2P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
