The GCMX014B120B2H2P is a 1200V silicon carbide full-bridge module designed for high-efficiency power conversion in applications such as photovoltaic inverters, battery chargers, and DC-DC converters. It is packaged in a B2H2 case with press-fit terminal connections and direct heatsink mounting. The module features two SiC MOSFETs with a rated continuous drain current of 60 A at 25°C case temperature and a drain-source on-resistance of 14.1 mΩ typical at 25°C. The junction temperature rating is 175°C, with a thermal resistance from junction to case of 0.47 to 0.53 °C/W. The device includes a reliable body diode with reverse recovery time of 13 ns and reverse recovery charge of 448 nC at 25°C. It meets RoHS3 compliance and has an isolation voltage of 3000 V. The package weighs 40 g and includes an NTC thermistor with 5 kΩ resistance at 25°C.
GEN3 1200V 14M SIC MOSFET FULL B
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX014B120B2H2P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
