The GCMX010A120B2B1P is a 1200V silicon carbide half-bridge module designed for high-efficiency switching in applications such as photovoltaic inverters, battery chargers, and DC-DC converters. It features press-fit terminals, a Kelvin source connection for stable gate drive, and direct heatsink mounting in an isolated B2 package measuring 58.5 mm x 40.7 mm x 11.5 mm. The device has a continuous drain current of 214 A at 25°C case temperature and a drain-source on-resistance of 8.6 mΩ at 20 V gate voltage and 50 A drain current. Thermal resistance from junction to case is 0.18°C/W, and the maximum junction temperature is 175°C. The module includes an integrated NTC thermistor with 5 kΩ resistance at 25°C and meets RoHS Directive 2011/65/EC. All components are tested to above 1350V.
MOSFET 2N-CH 1200V 214A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX010A120B2B1P-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | Module |
