SemiQ Inc. Single FETs, MOSFETs GCMS020B120S1-E1

The GCMS020B120S1-E1 is a 1200 V SiC copack power module integrating a MOSFET and a freewheeling SiC Schottky barrier diode for high-efficiency switching in applications such as photovoltaic inverters and server power supplies. It is packaged in an SOT-227 case measuring 31.67 to 31.90 mm in length, 7.95 to 8.18 mm in width, and 38.00 to 38.10 mm in height. The MOSFET has a continuous drain current of 105 A at 25°C and an on-resistance of 18 mΩ at 25°C, with a maximum junction temperature of 175°C. The Schottky diode supports a continuous forward current of 99 A. Thermal resistance from junction to case is 0.36°C/W for the MOSFET and 0.41°C/W for the diode. The package is isolated for direct heatsink mounting and complies with RoHS 2 directive. The module features Kelvin source connection for stable gate drive operation and zero reverse recovery in the diode.