SemiQ Inc. Single FETs, MOSFETs GCMS016C120S1-E1

The GCMS016C120S1-E1 is a 1200V SiC COPACK power module integrating a SiC MOSFET and a freewheeling SiC Schottky barrier diode, designed for high-efficiency switching applications such as photovoltaic inverters and server power supplies. It is packaged in an SOT-227 format measuring 31.67-31.90 mm in length, 7.95-8.18 mm in width, and 4.14-4.24 mm in height, with a mass of 32 grams. The device has a continuous drain current of 103 A at 25°C case temperature and a drain-source on-resistance of 16.5 mΩ at 25°C with V_GS=18V. It features a Kelvin source connection, isolated backplate, and is rated for a maximum junction temperature of 175°C. The module has a thermal resistance from junction to case of 0.40-0.50°C/W for the MOSFET and 0.41-0.51°C/W for the diode, and is avalanche tested to 800 mJ. It meets RoHS compliance per EU Directive 2011/65/EC and qualifies under JEDEC Standard JESD22-A104 Condition G.