SemiQ Inc. Single FETs, MOSFETs GCMS014C120S1-E1

The GCMS014C120S1-E1 is a 1200 V SiC COPACK power module combining a SiC MOSFET and freewheeling SiC SBD for high-efficiency switching in inverters, battery chargers, and server power supplies. It is packaged in an SOT-227 case measuring 31.67-31.90 mm × 30.15-30.25 mm × 7.95-8.18 mm and weighs 32 g. The MOSFET has a continuous drain current of 103 A at 25 °C and a drain-source on-resistance of 15.0 mΩ at 25 °C and 18 V gate voltage. The SiC SBD has zero reverse recovery. The junction temperature rating is 175 °C, with 0.40-0.50 °C/W junction-to-case thermal resistance and 800 mJ single-pulse avalanche energy. Mounting torque is 1.1-1.5 N·m with M4-0.7 screws. The isolation voltage is 4000 V. It complies with RoHS and is qualified to JEDEC JESD22-A104 Condition G.