SemiQ Inc. Single FETs, MOSFETs GCMS007C120S1-E1

The GCMS007C120S1-E1 is a 1200V silicon carbide copack power module integrating a SiC MOSFET and a freewheeling SiC Schottky barrier diode, designed for high-efficiency switching in power conversion applications such as photovoltaic inverters and server power supplies. It is packaged in a SOT-227 case measuring 31.67-31.90 mm in length, 7.95-8.18 mm in width, and 38.00-38.10 mm in height, with a weight of 32 g. The module has a continuous drain current rating of 189 A at 25°C case temperature and 135 A at 100°C case temperature. The drain-source on-resistance is 7.3 mΩ at 25°C and 13.6 mΩ at 175°C. It features an isolated backplate, Kelvin source connection, and avalanche energy rating of 800 mJ. Thermal resistance from junction to case is 0.23-0.28 °C/W for the MOSFET and 0.23-0.29 °C/W for the diode. The part is RoHS compliant and qualified to JEDEC JESD22-A104 Condition G.