Allegro MicroSystems Inc. Transistor ULN2803LW

Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, SOIC-18. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 73199096 - Radwell International
    Radwell International
Description
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, SOIC-18. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 73199096 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
73199096
Transistor 73199096
DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, SOIC-18. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER BIPOLAR TRANSISTOR, 0.5A I(C), 50V V(BR)CEO, 8-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, SOIC-18. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 73199096
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB816 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB816
Specs
Operating Frequency 4000 MHz
View Details
FET, MOSFET Arrays - 94-3449-ND - DigiKey
Infineon Technologies AG
FET, MOSFET Arrays
94-3449
Specs
Package Type "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers
DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT - TGF2955 - Qorvo
Qorvo
DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT
TGF2955
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 19.2 dB
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1006B-AZ - 906299-2SA1006B-AZ - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1006B-AZ
2SA1006B-AZ
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details