Sanken Electric Co., Ltd. Bipolar Transistor Arrays STA475A

Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 100V 2A 4W Through Hole 10-SIP
  • Bipolar Transistor Arrays - STA475A-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Arrays - STA475A - 047340-STA475A - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STA475A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 100V 2A 4W Through Hole 10-SIP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays - STA475A-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
STA475A-ND
Bipolar Transistor Arrays STA475A-ND
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 100V 2A 4W Through Hole 10-SIP

Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 100V 2A 4W Through Hole 10-SIP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - STA475A - 047340-STA475A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - STA475A
047340-STA475A
TRANSISTORS - Transistors (BJT) - Arrays - STA475A 047340-STA475A
Manufacturer: Sanken Win Source Part Number: 047340-STA475A Packaging: Bulk Mounting: Through Hole Transistor Polarity: 4 NPN Darlington (Quad) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 10-SIP Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.5V @ 2mA, 1A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 2000 @ 1A, 4V Maximum Power Dissipation: 4W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Sanken
Win Source Part Number: 047340-STA475A
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: 4 NPN Darlington (Quad)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 10-SIP
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 2mA, 1A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 2000 @ 1A, 4V
Maximum Power Dissipation: 4W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STA475A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STA475A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STA475A
TRANS 4NPN DARL 100V 2A 10SIP

TRANS 4NPN DARL 100V 2A 10SIP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number STA475A-ND 047340-STA475A STA475A
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - STA475A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 4 NPN Darlington (Quad)
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